Type Designator: AON6418
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and battery protection applications. V Gate-Source Voltage ±20 V Drain-Source Voltage 30 Units Maximum Junction-to-Ambient A t. The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), is a type of insulated-gate field-effect transistor that is fabricated by the controlled.
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.8 V
Maximum Drain Current |Id|: 32 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 4.8 nS
Drain-Source Capacitance (Cd): 526 pF
Maximum Drain-Source On-State Resistance (Rds): 0.005 Ohm
Package: DFN5X6EP
AON6418 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6418 Datasheet (PDF)
0.1. aon6418.pdf Size:306K _aosemi
AON641830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V)
8.1. aon6414.pdf Size:156K _aosemi
AON641430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
8.2. aon6416.pdf Size:268K _aosemi
AON641630V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS30VThe AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
8.3. aon6414a.pdf Size:268K _aosemi
AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
8.4. aon6414al.pdf Size:384K _aosemi
AON6414A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6414A uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
8.5. aon6410.pdf Size:158K _aosemi
AON641030V N-Channel MOSFETGeneral Description Product SummaryThe AON6410 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 24A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)
8.6. aon6413.pdf Size:278K _aosemi
AON641330V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Trench Power MOSFET technology -30V Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A Low Gate Charge RDS(ON) (at VGS=-10V)
8.7. aon6411.pdf Size:262K _aosemi
AON641120V P-Channel MOSFETGeneral Description Product SummaryVDS-20The AON6411 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
Datasheet: AON7514, AON7702, AON6200, AON6206, AON6408, AON6410, AON6414, AON6414AL, APT50M38JLL, AON6422, AON6454, AON6514, AON6534, AON6542, AON6702, AON6704A, AON6708.
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Type Designator: AON6426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 65 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 37 nC
Rise Time (tr): 8.6 nS
Drain-Source Capacitance (Cd): 290 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm
Package: DFN5X6
AON6426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6426 Datasheet (PDF)
6426 Mosfet Price
0.1. aon6426.pdf Size:149K _aosemi
AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
8.1. aon6422.pdf Size:155K _aosemi
AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
8.2. aon6428.pdf Size:301K _aosemi
AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
8.3. aon6424.pdf Size:390K _aosemi
AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
Datasheet: AON6404A, AON6405, AON6407, AON6411, AON6413, AON6414A, AON6416, AON6424, 2SK3569, AON6428, AON6435, AON6440, AON6442, AON6444, AON6448, AON6450, AON6452.
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6426 Mosfet Pdf
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
6426 Mosfet Equivalent